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Friday, April 11, 2014

Introduction to Semiconductors - MCQs

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MCQs for Introduction to Semiconductors

Multiple Choice Questions Topic Outline

  • MCQs in Atom
  • MCQs in Materials Used in Electronics
  • MCQs in Current in Semiconductors
  • MCQs in N-Type and P-Type Semiconductors
  • MCQs in The PN Junction
  • MCQs in GreenTech Application 1: Solar Power

Begin and Good luck!

1. An atom is made up of

  • A) protons.
  • B) neutrons.
  • C) electrons.
  • D) all of the above

2. The maximum number of electrons in each shell of an atom is

  • A) 2.
  • B) 2n2 where n is the number of the shell.
  • C) 4.
  • D) 8.

3. An n-type semiconductor material

  • A) is intrinsic.
  • B) has trivalent impurity atoms added.
  • C) has pentavalent impurity atoms added.
  • D) requires no doping.

4. A diode conducts when it is forward-biased, and the anode is connected to the __________ through a limiting resistor.

  • A) positive supply
  • B) negative supply
  • C) cathode
  • D) anode

5. The wide end arrow on a schematic indicates the __________ of a diode.

  • A) ground
  • B) direction of electron flow
  • C) cathode
  • D) anode

6. The term bias in electronics usually means

  • A) the value of ac voltage in the signal.
  • B) the condition of current through a pn junction.
  • C) the value of dc voltages for the device to operate properly.
  • D) the status of the diode.

7. Doping of a semiconductor material means

  • A) that a glue-type substance is added to hold the material together.
  • B) that impurities are added to increase the resistance of the material.
  • C) that impurities are added to decrease the resistance of the material.
  • D) that all impurities are removed to get pure silicon.

8. The forward voltage across a conducting silicon diode is about

  • A) 0.3 V.
  • B) 1.7 V.
  • C) –0.7 V.
  • D) 0.7 V.

9. You have an unknown type of diode in a circuit. You measure the voltage across it and find it to be 0.3 V. The diode might be

  • A) a silicon diode.
  • B) a germanium diode.
  • C) a forward-biased silicon diode.
  • D) a reverse-biased germanium diode.

10. A reverse-biased diode has the _____ connected to the positive side of the source, and the _____ connected to the negative side of the source.

  • A) cathode, anode
  • B) cathode, base
  • C) base, anode
  • D) anode, cathode

11. The movement of free electrons in a conductor is called

  • A) voltage.
  • B) current.
  • C) recombination.
  • D) equilibrium.

12. A silicon diode is forward-biased. You measure the voltage to ground from the anode at _____, and the voltage from the cathode to ground at _____.

  • A) 0 V, 0.3 V
  • B) 2.3 V, 1.6 V
  • C) 1.6 V, 2.3 V
  • D) 0.3 V, 0 V

13. There is a small amount of current across the barrier of a reverse-biased diode. This current is called

  • A) forward-bias current.
  • B) reverse breakdown current.
  • C) conventional current.
  • D) reverse leakage current.

14. The boundary between p-type material and n-type material is called

  • A) a diode.
  • B) a reverse-biased diode.
  • C) a pn junction.
  • D) a forward-biased diode.

15. Reverse breakdown is a condition in which a diode

  • A) is subjected to a large reverse voltage.
  • B) is reverse-biased and there is a small leakage current.
  • C) has no current flowing at all.
  • D) is heated up by large amounts of current in the forward direction.

16. As the forward current through a silicon diode increases, the voltage across the diode

  • A) increases to a 0.7 V maximum.
  • B) decreases.
  • C) is relatively constant.
  • D) decreases and then increases.

17. Which statement best describes an insulator?

  • A) A material with many free electrons.
  • B) A material doped to have some free electrons.
  • C) A material with few free electrons.
  • D) No description fits.

18. As the forward current through a silicon diode increases, the internal resistance

  • A) increases.
  • B) decreases.
  • C) remains the same.

19. A silicon diode measures a low value of resistance with the meter leads in both positions. The trouble, if any, is

  • A) the diode is open.
  • B) the diode is shorted to ground.
  • C) the diode is internally shorted.
  • D) the diode is working correctly.

20. Single-element semiconductors are characterized by atoms with ____ valence electrons.

  • A) 3
  • B) 4
  • C) 5
  • D) 2

21. Effectively, how many valence electrons are there in each atom within a silicon crystal?

  • A) 2
  • B) 4
  • C) 8
  • D) 16

22. What occurs when a conduction-band electron loses energy and falls back into a hole in the valence band?

  • A) doping
  • B) recombination
  • C) generation
  • D) none of the above

23. What types of impurity atoms are added to increase the number of conduction-band electrons in intrinsic silicon?

  • A) bivalent
  • B) octavalent
  • C) pentavalent
  • D) trivalent
  • E) none of the above

24. What factor(s) do(es) the barrier potential of a pn junction depend on?

  • A) type of semiconductive material
  • B) the amount of doping
  • C) the temperature
  • D) all of the above

25. Under normal conditions a diode conducts current when it is

  • A) reverse-biased.
  • B) forward-biased.
  • C) avalanched.
  • D) saturated.

26. For a forward-biased diode, as temperature is _____, the forward current _____ for a given value of forward voltage.

  • A) decreased, increases
  • B) increased, increases
  • C) increased, decreases
  • D) decreased, decreases

27. For a forward-biased diode, the barrier potential _____ as temperature increases.

  • A) decreases
  • B) remains constant
  • C) increases

28. An ideal diode presents a(n) _____ when reversed-biased and a(n) _____ when forward-biased.

  • A) open, short
  • B) short, open
  • C) open, open
  • D) short, short

29. The most common type of diode failure is a(n) _____.

  • A) open
  • B) short
  • C) resistive

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